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NSB9435T1G Технические параметры

ON Semiconductor  NSB9435T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 2 Weeks
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Number of Pins 4Pins
Collector-Emitter Breakdown Voltage 30V
Number of Elements 1 Element
hFEMin 125
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR
Свойство продукта Значение свойства
Voltage - Rated DC -30V
Max Power Dissipation 720mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 3mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
Polarity PNP
Element Configuration Single
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 800mA 1V
Vce Saturation (Max) @ Ib, Ic 550mV @ 300mA, 3A
Transition Frequency 110MHz
Frequency - Transition 110MHz
Resistor - Base (R1) 10 k Ω
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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NSB9435T1G Документы

NSB9435T1G brand manufacturers: ON Semiconductor, Anli stock, NSB9435T1G reference price.ON Semiconductor. NSB9435T1G parameters, NSB9435T1G Datasheet PDF and pin diagram description download.You can use the NSB9435T1G Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find NSB9435T1G pin diagram and circuit diagram and usage method of function,NSB9435T1G electronics tutorials.You can download from the Anli.