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NSBA123EDXV6T1G Технические параметры

ON Semiconductor  NSBA123EDXV6T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Surface Mount YES
Number of Pins 6Pins
Collector-Emitter Breakdown Voltage 50V
Number of Elements 2 Elements
hFEMin 8
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1
Свойство продукта Значение свойства
Voltage - Rated DC -50V
Max Power Dissipation 500mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating -100mA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number NSBA1*
Pin Count 6
Qualification Status Not Qualified
Polarity PNP
Element Configuration Dual
Power Dissipation 357mW
Transistor Type 2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA
Resistor - Base (R1) 2.2k Ω
Continuous Collector Current -100mA
Resistor - Emitter Base (R2) 2.2k Ω
RoHS Status RoHS Compliant
Lead Free Lead Free

NSBA123EDXV6T1G Документы

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