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NSBC115EPDXV6T1G Технические параметры

ON Semiconductor  NSBC115EPDXV6T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Марка ON Semiconductor
Factory Lead Time 17 Weeks
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Current-Collector (Ic) (Max) 100mA
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 357mW
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 100k Ω
Resistor - Emitter Base (R2) 100k Ω
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NSBC115EPDXV6T1G Документы

NSBC115EPDXV6T1G brand manufacturers: ON Semiconductor, Anli stock, NSBC115EPDXV6T1G reference price.ON Semiconductor. NSBC115EPDXV6T1G parameters, NSBC115EPDXV6T1G Datasheet PDF and pin diagram description download.You can use the NSBC115EPDXV6T1G Transistors - Bipolar (BJT) - Arrays, Pre-Biased, DSP Datesheet PDF, find NSBC115EPDXV6T1G pin diagram and circuit diagram and usage method of function,NSBC115EPDXV6T1G electronics tutorials.You can download from the Anli.