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NSD16F3T5G Технические параметры
ON Semiconductor NSD16F3T5G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Single | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) | |
| Factory Lead Time | 2 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-1123 | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Diode Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 0.29W | |
| Packaging | Tape & Reel (TR) | |
| Published | 2009 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| HTS Code | 8541.10.00.70 | |
| Terminal Position | DUAL |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Form | FLAT | |
| Pin Count | 3 | |
| Element Configuration | Single | |
| Speed | Small Signal =< 200mA (Io), Any Speed | |
| Diode Type | Standard | |
| Current - Reverse Leakage @ Vr | 1μA @ 75V | |
| Voltage - Forward (Vf) (Max) @ If | 1.25V @ 150mA | |
| Forward Current | 200mA | |
| Max Reverse Leakage Current | 1μA | |
| Operating Temperature - Junction | -55°C~150°C | |
| Output Current-Max | 0.2A | |
| Halogen Free | Halogen Free | |
| Current - Average Rectified (Io) | 200mA DC | |
| Max Reverse Voltage (DC) | 75V | |
| Average Rectified Current | 200mA | |
| Reverse Recovery Time | 6 ns | |
| Peak Reverse Current | 1μA | |
| Max Repetitive Reverse Voltage (Vrrm) | 75V | |
| Capacitance @ Vr, F | 2pF @ 0V 1MHz | |
| Recovery Time | 6 ns | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
NSD16F3T5G Документы
- DatasheetsNSD16F3T5G
- Environmental InformationMaterial Declaration NSD16F3T5G
- PCN Design/SpecificationWire Bond 01/Dec/2010 Mult Devices Tape Design 06/Mar/2018
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