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NSDEMN11XV6T1 Технические параметры

ON Semiconductor  NSDEMN11XV6T1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Arrays
Марка ON Semiconductor
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Diode Element Material SILICON
Number of Elements 4 Elements
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
HTS Code 8541.10.00.70
Capacitance 3.5pF
Voltage - Rated DC 80V
Max Power Dissipation 357mW
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MN11
Pin Count 6
JESD-30 Code R-PDSO-F6
Qualification Status Not Qualified
Element Configuration Common Cathode
Speed Small Signal =< 200mA (Io), Any Speed
Diode Type Standard
Current - Reverse Leakage @ Vr 100nA @ 70V
Voltage - Forward (Vf) (Max) @ If 1.2V @ 100mA
Max Reverse Leakage Current 100nA
Operating Temperature - Junction -55°C~150°C
Max Surge Current 2A
Output Current-Max 0.1A
Current - Average Rectified (Io) 100mA DC
Max Reverse Voltage (DC) 80V
Average Rectified Current 100mA
Reverse Recovery Time 4 ns
Diode Configuration 2 Pair Common Cathode
Recovery Time 4 ns
Reverse Test Voltage 70V
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

NSDEMN11XV6T1 Документы

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