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NSS20501UW3T2G Технические параметры

ON Semiconductor  NSS20501UW3T2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 2 Weeks
Mounting Type Surface Mount
Package / Case 3-WDFN Exposed Pad
Surface Mount YES
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 20V
Number of Elements 1 Element
hFEMin 200
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 1.5W
Terminal Position DUAL
Свойство продукта Значение свойства
Base Part Number NSS20501
Pin Count 3
Element Configuration Single
Case Connection COLLECTOR
Power - Max 875mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Gain Bandwidth Product 150MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 125mV @ 400mA, 4A
Transition Frequency 150MHz
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 6V
Turn Off Time-Max (toff) 190ns
Turn On Time-Max (ton) 600ns
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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