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NSS30201MR6T1G Технические параметры

ON Semiconductor  NSS30201MR6T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case SOT-23-6
Surface Mount YES
Number of Pins 6Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 30V
Number of Elements 1 Element
hFEMin 300
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 30V
Max Power Dissipation 535mW
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Current Rating 2A
Frequency 300MHz
Base Part Number NSS30201
Pin Count 6
Element Configuration Single
Power Dissipation 1.18W
Transistor Application SWITCHING
Halogen Free Halogen Free
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 500mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 75mV @ 1mA, 100mA
Transition Frequency 300MHz
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
Height 1mm
Length 3.1mm
Width 1.7mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NSS30201MR6T1G Документы

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