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NSS40300DDR2G Технические параметры

ON Semiconductor  NSS40300DDR2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 2 Weeks
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Number of Pins 8Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 40V
Current-Collector (Ic) (Max) 3A
Number of Elements 2 Elements
hFEMin 250
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Свойство продукта Значение свойства
Max Power Dissipation 783mW
Terminal Form GULL WING
Pin Count 8
Polarity PNP
Element Configuration Dual
Power - Max 653mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Gain Bandwidth Product 100MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 170mV
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 1A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 170mV @ 200mA, 2A
Transition Frequency 100MHz
Collector Base Voltage (VCBO) -40V
Emitter Base Voltage (VEBO) -7V
Turn Off Time-Max (toff) 530ns
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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NSS40300DDR2G Документы

NSS40300DDR2G brand manufacturers: ON Semiconductor, Anli stock, NSS40300DDR2G reference price.ON Semiconductor. NSS40300DDR2G parameters, NSS40300DDR2G Datasheet PDF and pin diagram description download.You can use the NSS40300DDR2G Transistors - Bipolar (BJT) - Arrays, DSP Datesheet PDF, find NSS40300DDR2G pin diagram and circuit diagram and usage method of function,NSS40300DDR2G electronics tutorials.You can download from the Anli.