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NST3906DP6T5G Технические параметры

ON Semiconductor  NST3906DP6T5G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Factory Lead Time 2 Weeks
Mounting Type Surface Mount
Package / Case SOT-963
Surface Mount YES
Number of Pins 6Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 40V
Number of Elements 2 Elements
hFEMin 60
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 280mW
Terminal Form FLAT
Frequency 250MHz
Base Part Number NST3906D
Свойство продукта Значение свойства
Pin Count 6
Polarity PNP
Element Configuration Dual
Power Dissipation 280mW
Power - Max 350mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 250MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Transition Frequency 250MHz
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
Turn Off Time-Max (toff) 300ns
Turn On Time-Max (ton) 70ns
Height 400μm
Length 1.05mm
Width 850μm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NST3906DP6T5G Документы

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