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NST3946DP6T5G Технические параметры

ON Semiconductor  NST3946DP6T5G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case SOT-963
Surface Mount YES
Number of Pins 6Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 40V
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 420mW
Terminal Form FLAT
Свойство продукта Значение свойства
Frequency 200MHz
Base Part Number NST3946D
Pin Count 6
Polarity NPN, PNP
Element Configuration Dual
Power Dissipation 420mW
Power - Max 350mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 250MHz
Transistor Type NPN, PNP
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Transition Frequency 200MHz
Max Breakdown Voltage 40V
Frequency - Transition 200MHz 250MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
Turn On Time-Max (ton) 70ns
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NST3946DP6T5G Документы

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