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NST847BDP6T5G Технические параметры

ON Semiconductor  NST847BDP6T5G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 2 Weeks
Mounting Type Surface Mount
Package / Case SOT-963
Surface Mount YES
Number of Pins 6Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 45V
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 420mW
Terminal Form FLAT
Свойство продукта Значение свойства
Frequency 100MHz
Pin Count 6
Polarity NPN
Element Configuration Dual
Power Dissipation 420mW
Power - Max 350mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 100MHz
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 6V
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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NST847BDP6T5G Документы

NST847BDP6T5G brand manufacturers: ON Semiconductor, Anli stock, NST847BDP6T5G reference price.ON Semiconductor. NST847BDP6T5G parameters, NST847BDP6T5G Datasheet PDF and pin diagram description download.You can use the NST847BDP6T5G Transistors - Bipolar (BJT) - Arrays, DSP Datesheet PDF, find NST847BDP6T5G pin diagram and circuit diagram and usage method of function,NST847BDP6T5G electronics tutorials.You can download from the Anli.