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NSV1C200LT1G Технические параметры

ON Semiconductor  NSV1C200LT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 100V
Current-Collector (Ic) (Max) 2A
Number of Elements 1 Element
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Свойство продукта Значение свойства
Max Power Dissipation 490mW
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Reference Standard AEC-Q101
Element Configuration Single
Transistor Application SWITCHING
Halogen Free Halogen Free
Gain Bandwidth Product 120MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 200mA, 2A
Transition Frequency 120MHz
Collector Base Voltage (VCBO) -140V
Continuous Collector Current -2A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NSV1C200LT1G Документы

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