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NSV1C300ET4G Технические параметры

ON Semiconductor  NSV1C300ET4G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Factory Lead Time 22 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 100V
hFEMin 120
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 33W
Pin Count 3
Element Configuration Single
Свойство продукта Значение свойства
Power - Max 2.1W
Halogen Free Halogen Free
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 300mA, 3A
Max Frequency 100MHz
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 140V
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 3A
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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NSV1C300ET4G Документы

NSV1C300ET4G brand manufacturers: ON Semiconductor, Anli stock, NSV1C300ET4G reference price.ON Semiconductor. NSV1C300ET4G parameters, NSV1C300ET4G Datasheet PDF and pin diagram description download.You can use the NSV1C300ET4G Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find NSV1C300ET4G pin diagram and circuit diagram and usage method of function,NSV1C300ET4G electronics tutorials.You can download from the Anli.