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NSV20101JT1G Технические параметры

ON Semiconductor  NSV20101JT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case SC-89, SOT-490
Surface Mount YES
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 20V
Number of Elements 1 Element
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 255mW
Свойство продукта Значение свойства
Terminal Position DUAL
Terminal Form FLAT
Pin Count 3
Reference Standard AEC-Q101
Configuration SINGLE
Power - Max 255mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 220mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 220mV @ 100mA, 1A
Transition Frequency 350MHz
Frequency - Transition 350MHz
Collector Base Voltage (VCBO) 40V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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NSV20101JT1G Документы

NSV20101JT1G brand manufacturers: ON Semiconductor, Anli stock, NSV20101JT1G reference price.ON Semiconductor. NSV20101JT1G parameters, NSV20101JT1G Datasheet PDF and pin diagram description download.You can use the NSV20101JT1G Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find NSV20101JT1G pin diagram and circuit diagram and usage method of function,NSV20101JT1G electronics tutorials.You can download from the Anli.