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NSV2SA2029M3T5G Технические параметры

ON Semiconductor  NSV2SA2029M3T5G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-723
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 50V
Number of Elements 1 Element
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin (Sn)
Свойство продукта Значение свойства
Max Power Dissipation 265mW
Terminal Position DUAL
Terminal Form FLAT
Reference Standard AEC-Q101
Configuration SINGLE
Power - Max 265mW
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 6V
Current - Collector Cutoff (Max) 500pA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Transition Frequency 140MHz
Frequency - Transition 140MHz
Collector Base Voltage (VCBO) 60V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NSV2SA2029M3T5G Документы

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