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NSV60100DMTWTBG Технические параметры

ON Semiconductor  NSV60100DMTWTBG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Collector-Emitter Breakdown Voltage 60V
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Свойство продукта Значение свойства
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Max Power Dissipation 2.27W
Power - Max 2.27W
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 100mA, 2A
Frequency - Transition 155MHz
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства

NSV60100DMTWTBG Документы

NSV60100DMTWTBG brand manufacturers: ON Semiconductor, Anli stock, NSV60100DMTWTBG reference price.ON Semiconductor. NSV60100DMTWTBG parameters, NSV60100DMTWTBG Datasheet PDF and pin diagram description download.You can use the NSV60100DMTWTBG Transistors - Bipolar (BJT) - Arrays, DSP Datesheet PDF, find NSV60100DMTWTBG pin diagram and circuit diagram and usage method of function,NSV60100DMTWTBG electronics tutorials.You can download from the Anli.