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NSV60101DMR6T1G Технические параметры

ON Semiconductor  NSV60101DMR6T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка ON Semiconductor
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 1A
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Свойство продукта Значение свойства
Terminal Finish Silver (Ag)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G6
Configuration SEPARATE, 2 ELEMENTS
Power - Max 530mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type 2 NPN (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max) 60V
Transition Frequency 200MHz
Frequency - Transition 200MHz
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NSV60101DMR6T1G Документы

NSV60101DMR6T1G brand manufacturers: ON Semiconductor, Anli stock, NSV60101DMR6T1G reference price.ON Semiconductor. NSV60101DMR6T1G parameters, NSV60101DMR6T1G Datasheet PDF and pin diagram description download.You can use the NSV60101DMR6T1G Transistors - Bipolar (BJT) - Arrays, DSP Datesheet PDF, find NSV60101DMR6T1G pin diagram and circuit diagram and usage method of function,NSV60101DMR6T1G electronics tutorials.You can download from the Anli.