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NSV60101DMTWTBG Технические параметры

ON Semiconductor  NSV60101DMTWTBG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Factory Lead Time 5 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 60V
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 2.27W
Свойство продукта Значение свойства
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code S-PDSO-N6
Configuration SEPARATE, 2 ELEMENTS
Case Connection COLLECTOR
Power - Max 2.27W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 180mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 180mV @ 100mA, 1A
Transition Frequency 180MHz
Frequency - Transition 180MHz
VCEsat-Max 0.2 V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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NSV60101DMTWTBG Документы

NSV60101DMTWTBG brand manufacturers: ON Semiconductor, Anli stock, NSV60101DMTWTBG reference price.ON Semiconductor. NSV60101DMTWTBG parameters, NSV60101DMTWTBG Datasheet PDF and pin diagram description download.You can use the NSV60101DMTWTBG Transistors - Bipolar (BJT) - Arrays, DSP Datesheet PDF, find NSV60101DMTWTBG pin diagram and circuit diagram and usage method of function,NSV60101DMTWTBG electronics tutorials.You can download from the Anli.