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NSV60200LT1G Технические параметры

ON Semiconductor  NSV60200LT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 60V
Current-Collector (Ic) (Max) 2A
Number of Elements 1 Element
hFEMin 100
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Свойство продукта Значение свойства
Terminal Finish Tin (Sn)
Max Power Dissipation 460mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 100MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Element Configuration Single
Power Dissipation 540mW
Halogen Free Halogen Free
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 220mV @ 200mA, 2A
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) -7V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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NSV60200LT1G Документы

NSV60200LT1G brand manufacturers: ON Semiconductor, Anli stock, NSV60200LT1G reference price.ON Semiconductor. NSV60200LT1G parameters, NSV60200LT1G Datasheet PDF and pin diagram description download.You can use the NSV60200LT1G Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find NSV60200LT1G pin diagram and circuit diagram and usage method of function,NSV60200LT1G electronics tutorials.You can download from the Anli.