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NSV60600MZ4T3G Технические параметры

ON Semiconductor  NSV60600MZ4T3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 11 Weeks
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Number of Pins 4Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 60V
Current-Collector (Ic) (Max) 6A
Number of Elements 1 Element
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 800mW
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form GULL WING
Frequency 100MHz
Base Part Number NSS60600
Pin Count 4
Configuration SINGLE
Power Dissipation 2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Halogen Free Halogen Free
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 6A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 350mV @ 600mA, 6A
Transition Frequency 100MHz
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 6V
Turn Off Time-Max (toff) 685ns
Turn On Time-Max (ton) 280ns
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NSV60600MZ4T3G Документы

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