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NSVB114YPDXV6T1G Технические параметры

ON Semiconductor  NSVB114YPDXV6T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Марка ON Semiconductor
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 50V
Number of Elements 2 Elements
Packaging Tape & Reel (TR)
Published 2014
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Additional Feature BUILT-IN BIAS RESISTOR RATIO 4.7
Max Power Dissipation 500mW
Свойство продукта Значение свойства
Terminal Form FLAT
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-F6
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power - Max 500mW
Transistor Application SWITCHING
Polarity/Channel Type NPN AND PNP
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Resistor - Base (R1) 10k Ω
Resistor - Emitter Base (R2) 47k Ω
RoHS Status RoHS Compliant
Lead Free Lead Free
Просмотр сходства

NSVB114YPDXV6T1G Документы

NSVB114YPDXV6T1G brand manufacturers: ON Semiconductor, Anli stock, NSVB114YPDXV6T1G reference price.ON Semiconductor. NSVB114YPDXV6T1G parameters, NSVB114YPDXV6T1G Datasheet PDF and pin diagram description download.You can use the NSVB114YPDXV6T1G Transistors - Bipolar (BJT) - Arrays, Pre-Biased, DSP Datesheet PDF, find NSVB114YPDXV6T1G pin diagram and circuit diagram and usage method of function,NSVB114YPDXV6T1G electronics tutorials.You can download from the Anli.