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NSVBAS21SLT1G Технические параметры

ON Semiconductor  NSVBAS21SLT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Factory Lead Time 4 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3Pins
Diode Element Material SILICON
Number of Elements 2 Elements
Power Dissipation (Max) 0.225W
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Свойство продукта Значение свойства
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Reference Standard AEC-Q101
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 100μA @ 200V
Voltage - Forward (Vf) (Max) @ If 1.25V @ 200mA
Forward Current 225mA
Operating Temperature - Junction -55°C~150°C
Output Current-Max 0.225A
Current - Average Rectified (Io) 225mA DC
Max Reverse Voltage (DC) 250V
Average Rectified Current 225mA
Reverse Recovery Time 50 ns
Peak Reverse Current 100nA
Max Repetitive Reverse Voltage (Vrrm) 250V
Capacitance @ Vr, F 5pF @ 0V 1MHz
Peak Non-Repetitive Surge Current 625mA
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NSVBAS21SLT1G Документы

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