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NSVBAS21TMR6T1G Технические параметры

ON Semiconductor  NSVBAS21TMR6T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Surface Mount YES
Number of Pins 6Pins
Diode Element Material SILICON
Number of Elements 3 Elements
Power Dissipation (Max) 0.311W
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
HTS Code 8541.10.00.70
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form GULL WING
Pin Count 6
Reference Standard AEC-Q101
Speed Small Signal =< 200mA (Io), Any Speed
Diode Type Standard
Current - Reverse Leakage @ Vr 100nA @ 200V
Voltage - Forward (Vf) (Max) @ If 1.25V @ 200mA
Forward Current 200mA
Operating Temperature - Junction -55°C~150°C
Output Current-Max 0.2A
Halogen Free Halogen Free
Current - Average Rectified (Io) 200mA DC
Max Reverse Voltage (DC) 250V
Average Rectified Current 200mA
Reverse Recovery Time 50 ns
Max Repetitive Reverse Voltage (Vrrm) 250V
Peak Non-Repetitive Surge Current 625mA
Diode Configuration 3 Independent
Reverse Current-Max 100μA
Reverse Test Voltage 200V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NSVBAS21TMR6T1G Документы

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