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NSVBC123JDXV6T1G Технические параметры

ON Semiconductor  NSVBC123JDXV6T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Марка ON Semiconductor
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package SOT-563
Package Tape & Reel (TR)
Current-Collector (Ic) (Max) 100mA
Base Product Number NSVBC123
Mfr onsemi
Product Status Active
Свойство продукта Значение свойства
Series -
Power - Max 357mW
Transistor Type 2 NPN - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Frequency - Transition -
Resistor - Base (R1) 2.2kOhms
Resistor - Emitter Base (R2) 47kOhms
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NSVBC123JDXV6T1G Документы

  • Datasheets
NSVBC123JDXV6T1G brand manufacturers: ON Semiconductor, Anli stock, NSVBC123JDXV6T1G reference price.ON Semiconductor. NSVBC123JDXV6T1G parameters, NSVBC123JDXV6T1G Datasheet PDF and pin diagram description download.You can use the NSVBC123JDXV6T1G Transistors - Bipolar (BJT) - Arrays, Pre-Biased, DSP Datesheet PDF, find NSVBC123JDXV6T1G pin diagram and circuit diagram and usage method of function,NSVBC123JDXV6T1G electronics tutorials.You can download from the Anli.