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NSVBC124EPDXV6T1G Технические параметры

ON Semiconductor  NSVBC124EPDXV6T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Марка ON Semiconductor
Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Surface Mount YES
Package / Case SOT-563, SOT-666
Mounting Type Surface Mount
Transistor Element Material SILICON
Operating Temperature (Min.) -55°C
Operating Temperature (Max.) 150°C
Number of Elements 2 Elements
Current-Collector (Ic) (Max) 100mA
Series Automotive, AEC-Q101
Published 2016
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
Number of Terminations 6Terminations
Terminal Finish Tin (Sn)
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F6
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power - Max 339mW
Transistor Application SWITCHING
Polarity/Channel Type NPN AND PNP
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 22k Ω
Resistor - Emitter Base (R2) 22k Ω
RoHS Status ROHS3 Compliant

NSVBC124EPDXV6T1G Документы

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