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NSVBC817-16LT1G Технические параметры

ON Semiconductor  NSVBC817-16LT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 5 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Weight 1.437803g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 45V
Current-Collector (Ic) (Max) 500mA
Number of Elements 1 Element
hFEMin 100
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Свойство продукта Значение свойства
Terminal Finish Tin (Sn)
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Reference Standard AEC-Q101
Element Configuration Single
Power - Max 225mW
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Transition Frequency 100MHz
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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NSVBC817-16LT1G Документы

NSVBC817-16LT1G brand manufacturers: ON Semiconductor, Anli stock, NSVBC817-16LT1G reference price.ON Semiconductor. NSVBC817-16LT1G parameters, NSVBC817-16LT1G Datasheet PDF and pin diagram description download.You can use the NSVBC817-16LT1G Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find NSVBC817-16LT1G pin diagram and circuit diagram and usage method of function,NSVBC817-16LT1G electronics tutorials.You can download from the Anli.