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NSVBCP69T1G Технические параметры
ON Semiconductor NSVBCP69T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) | |
| Factory Lead Time | 8 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-261-4, TO-261AA | |
| Surface Mount | YES | |
| Number of Pins | 4Pins | |
| Collector-Emitter Breakdown Voltage | 20V | |
| Operating Temperature | -65°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2008 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Finish | Tin (Sn) | |
| Max Power Dissipation | 1.5W | |
| Pin Count | 4 | |
| Configuration | Single | |
| Power - Max | 1.5W | |
| Polarity/Channel Type | PNP | |
| Transistor Type | PNP | |
| Collector Emitter Voltage (VCEO) | 500mV | |
| Max Collector Current | 1A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 85 @ 500mA 1V | |
| Current - Collector Cutoff (Max) | 10μA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A | |
| Frequency - Transition | 60MHz | |
| Collector Base Voltage (VCBO) | 25V | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
Индекс :
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