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NSVBCW68GLT1G Технические параметры

ON Semiconductor  NSVBCW68GLT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Collector-Emitter Breakdown Voltage 45V
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Pbfree Code yes
Part Status Active
Свойство продукта Значение свойства
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 225mW
Power - Max 225mW
Transistor Type PNP
Collector Emitter Voltage (VCEO) 700mV
Max Collector Current 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 10mA 1V
Current - Collector Cutoff (Max) 20nA
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Frequency - Transition 100MHz
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства

NSVBCW68GLT1G Документы

NSVBCW68GLT1G brand manufacturers: ON Semiconductor, Anli stock, NSVBCW68GLT1G reference price.ON Semiconductor. NSVBCW68GLT1G parameters, NSVBCW68GLT1G Datasheet PDF and pin diagram description download.You can use the NSVBCW68GLT1G Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find NSVBCW68GLT1G pin diagram and circuit diagram and usage method of function,NSVBCW68GLT1G electronics tutorials.You can download from the Anli.