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NSVDTC123EM3T5G Технические параметры

ON Semiconductor  NSVDTC123EM3T5G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 weeks ago)
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-723
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 50V
Number of Elements 1 Element
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Max Power Dissipation 260mW
Свойство продукта Значение свойства
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-F3
Configuration SINGLE WITH BUILT-IN RESISTOR
Power - Max 260mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA
Resistor - Base (R1) 2.2 k Ω
Resistor - Emitter Base (R2) 2.2 k Ω
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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NSVDTC123EM3T5G Документы

NSVDTC123EM3T5G brand manufacturers: ON Semiconductor, Anli stock, NSVDTC123EM3T5G reference price.ON Semiconductor. NSVDTC123EM3T5G parameters, NSVDTC123EM3T5G Datasheet PDF and pin diagram description download.You can use the NSVDTC123EM3T5G Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find NSVDTC123EM3T5G pin diagram and circuit diagram and usage method of function,NSVDTC123EM3T5G electronics tutorials.You can download from the Anli.