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NSVDTC123JET1G Технические параметры

ON Semiconductor  NSVDTC123JET1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 weeks ago)
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 50V
Number of Elements 1 Element
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin (Sn)
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 21
Max Power Dissipation 200mW
Свойство продукта Значение свойства
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-G3
Configuration SINGLE WITH BUILT-IN RESISTOR
Power - Max 200mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Resistor - Base (R1) 2.2 k Ω
Resistor - Emitter Base (R2) 47 k Ω
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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NSVDTC123JET1G Документы

NSVDTC123JET1G brand manufacturers: ON Semiconductor, Anli stock, NSVDTC123JET1G reference price.ON Semiconductor. NSVDTC123JET1G parameters, NSVDTC123JET1G Datasheet PDF and pin diagram description download.You can use the NSVDTC123JET1G Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find NSVDTC123JET1G pin diagram and circuit diagram and usage method of function,NSVDTC123JET1G electronics tutorials.You can download from the Anli.