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ON Semiconductor NSVF6003SB6T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) | |
| Factory Lead Time | 4 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Current-Collector (Ic) (Max) | 150mA | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | Automotive, AEC-Q101 | |
| Published | 2011 | |
| JESD-609 Code | e6 | |
| Pbfree Code | yes |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Terminal Finish | Tin/Bismuth (Sn/Bi) | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Power - Max | 800mW | |
| Transistor Type | NPN | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA 5V | |
| Gain | 9dB | |
| Voltage - Collector Emitter Breakdown (Max) | 12V | |
| Frequency - Transition | 7GHz | |
| Noise Figure (dB Typ @ f) | 3dB @ 1GHz | |
| RoHS Status | ROHS3 Compliant |