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NSVIMD10AMT1G Технические параметры

ON Semiconductor  NSVIMD10AMT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Current-Collector (Ic) (Max) 500mA
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Свойство продукта Значение свойства
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 285mW
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA 5V / 68 @ 100mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 13k Ω, 130 Ω
Resistor - Emitter Base (R2) 10k Ω
RoHS Status ROHS3 Compliant
Просмотр сходства

NSVIMD10AMT1G Документы

NSVIMD10AMT1G brand manufacturers: ON Semiconductor, Anli stock, NSVIMD10AMT1G reference price.ON Semiconductor. NSVIMD10AMT1G parameters, NSVIMD10AMT1G Datasheet PDF and pin diagram description download.You can use the NSVIMD10AMT1G Transistors - Bipolar (BJT) - Arrays, Pre-Biased, DSP Datesheet PDF, find NSVIMD10AMT1G pin diagram and circuit diagram and usage method of function,NSVIMD10AMT1G electronics tutorials.You can download from the Anli.