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NSVMMBT2907AWT1G Технические параметры

ON Semiconductor  NSVMMBT2907AWT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case 5-TSSOP, SC-70-5, SOT-353
Surface Mount YES
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 60V
Number of Elements 1 Element
hFEMin 100
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Свойство продукта Значение свойства
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form GULL WING
Frequency 200MHz
Pin Count 3
Element Configuration Single
Power Dissipation 150mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Transition Frequency 200MHz
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) 5V
Turn On Time-Max (ton) 45ns
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NSVMMBT2907AWT1G Документы

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