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NSVMMBT5401LT3G Технические параметры

ON Semiconductor  NSVMMBT5401LT3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 6 hours ago)
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 150V
Current-Collector (Ic) (Max) 500mA
Number of Elements 1 Element
hFEMin 60
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Свойство продукта Значение свойства
Terminal Finish Tin (Sn)
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Reference Standard AEC-Q101
Element Configuration Single
Gain Bandwidth Product 300MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Transition Frequency 100MHz
Collector Base Voltage (VCBO) -160V
Emitter Base Voltage (VEBO) -5V
Continuous Collector Current -500mA
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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NSVMMBT5401LT3G Документы

NSVMMBT5401LT3G brand manufacturers: ON Semiconductor, Anli stock, NSVMMBT5401LT3G reference price.ON Semiconductor. NSVMMBT5401LT3G parameters, NSVMMBT5401LT3G Datasheet PDF and pin diagram description download.You can use the NSVMMBT5401LT3G Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find NSVMMBT5401LT3G pin diagram and circuit diagram and usage method of function,NSVMMBT5401LT3G electronics tutorials.You can download from the Anli.