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NSVMMBT5401WT1G Технические параметры

ON Semiconductor  NSVMMBT5401WT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 150V
Number of Elements 1 Element
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2012
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
Number of Terminations 3Terminations
Max Power Dissipation 400mW
Terminal Position DUAL
Terminal Form GULL WING
Configuration SINGLE
Power - Max 400mW
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Transition Frequency 100MHz
Frequency - Transition 300MHz
Collector Base Voltage (VCBO) 160V
Emitter Base Voltage (VEBO) 5V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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NSVMMBT5401WT1G Документы

NSVMMBT5401WT1G brand manufacturers: ON Semiconductor, Anli stock, NSVMMBT5401WT1G reference price.ON Semiconductor. NSVMMBT5401WT1G parameters, NSVMMBT5401WT1G Datasheet PDF and pin diagram description download.You can use the NSVMMBT5401WT1G Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find NSVMMBT5401WT1G pin diagram and circuit diagram and usage method of function,NSVMMBT5401WT1G electronics tutorials.You can download from the Anli.