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NSVMMBT6429LT1G Технические параметры

ON Semiconductor  NSVMMBT6429LT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 2 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 45V
Current-Collector (Ic) (Max) 200mA
Number of Elements 1 Element
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Свойство продукта Значение свойства
Max Power Dissipation 300mW
Frequency 700MHz
Pin Count 3
Configuration Single
Power Dissipation 300mW
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 500 @ 100μA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Transition Frequency 100MHz
Collector Base Voltage (VCBO) 55V
Emitter Base Voltage (VEBO) 6V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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NSVMMBT6429LT1G Документы

NSVMMBT6429LT1G brand manufacturers: ON Semiconductor, Anli stock, NSVMMBT6429LT1G reference price.ON Semiconductor. NSVMMBT6429LT1G parameters, NSVMMBT6429LT1G Datasheet PDF and pin diagram description download.You can use the NSVMMBT6429LT1G Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find NSVMMBT6429LT1G pin diagram and circuit diagram and usage method of function,NSVMMBT6429LT1G electronics tutorials.You can download from the Anli.