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NSVMMBT6520LT1G Технические параметры

ON Semiconductor  NSVMMBT6520LT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 350V
Current-Collector (Ic) (Max) 500mA
Number of Elements 1 Element
hFEMin 30
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Свойство продукта Значение свойства
Terminal Finish Tin (Sn)
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Frequency 200MHz
Element Configuration Single
Power Dissipation 300mW
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 350V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 50mA 10V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 5mA, 50mA
Transition Frequency 40MHz
Collector Base Voltage (VCBO) 350V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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NSVMMBT6520LT1G Документы

NSVMMBT6520LT1G brand manufacturers: ON Semiconductor, Anli stock, NSVMMBT6520LT1G reference price.ON Semiconductor. NSVMMBT6520LT1G parameters, NSVMMBT6520LT1G Datasheet PDF and pin diagram description download.You can use the NSVMMBT6520LT1G Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find NSVMMBT6520LT1G pin diagram and circuit diagram and usage method of function,NSVMMBT6520LT1G electronics tutorials.You can download from the Anli.