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NSVMMUN2113LT3G Технические параметры

ON Semiconductor  NSVMMUN2113LT3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 50V
Number of Elements 1 Element
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Свойство продукта Значение свойства
Max Power Dissipation 246mW
Terminal Position DUAL
Terminal Form GULL WING
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-G3
Configuration SINGLE WITH BUILT-IN RESISTOR
Power - Max 246mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
JEDEC-95 Code TO-236AB
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Resistor - Base (R1) 47 k Ω
Resistor - Emitter Base (R2) 47 k Ω
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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NSVMMUN2113LT3G Документы

NSVMMUN2113LT3G brand manufacturers: ON Semiconductor, Anli stock, NSVMMUN2113LT3G reference price.ON Semiconductor. NSVMMUN2113LT3G parameters, NSVMMUN2113LT3G Datasheet PDF and pin diagram description download.You can use the NSVMMUN2113LT3G Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find NSVMMUN2113LT3G pin diagram and circuit diagram and usage method of function,NSVMMUN2113LT3G electronics tutorials.You can download from the Anli.