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NSVMSD42WT1G Технические параметры

ON Semiconductor  NSVMSD42WT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 15 Weeks
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Surface Mount YES
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 300V
Number of Elements 1 Element
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Свойство продукта Значение свойства
Max Power Dissipation 450mW
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Reference Standard AEC-Q101
Configuration SINGLE
Power - Max 450mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Collector Base Voltage (VCBO) 300V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NSVMSD42WT1G Документы

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