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NSVMUN2112T1G Технические параметры

ON Semiconductor  NSVMUN2112T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 2 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 50V
Number of Elements 1 Element
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 230mW
Power - Max 230mW
Polarity/Channel Type PNP
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Resistor - Base (R1) 22 k Ω
Resistor - Emitter Base (R2) 22 k Ω
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства

NSVMUN2112T1G Документы

NSVMUN2112T1G brand manufacturers: ON Semiconductor, Anli stock, NSVMUN2112T1G reference price.ON Semiconductor. NSVMUN2112T1G parameters, NSVMUN2112T1G Datasheet PDF and pin diagram description download.You can use the NSVMUN2112T1G Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find NSVMUN2112T1G pin diagram and circuit diagram and usage method of function,NSVMUN2112T1G electronics tutorials.You can download from the Anli.