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NSVMUN2212T1G Технические параметры

ON Semiconductor  NSVMUN2212T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 2 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 50V
Number of Elements 1 Element
hFEMin 60
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Свойство продукта Значение свойства
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Max Power Dissipation 230mW
Terminal Position DUAL
Terminal Form GULL WING
Base Part Number MUN2212
Pin Count 3
Polarity NPN
Element Configuration Single
Transistor Application SWITCHING
Halogen Free Halogen Free
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Resistor - Base (R1) 22 k Ω
Resistor - Emitter Base (R2) 22 k Ω
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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NSVMUN2212T1G Документы

NSVMUN2212T1G brand manufacturers: ON Semiconductor, Anli stock, NSVMUN2212T1G reference price.ON Semiconductor. NSVMUN2212T1G parameters, NSVMUN2212T1G Datasheet PDF and pin diagram description download.You can use the NSVMUN2212T1G Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find NSVMUN2212T1G pin diagram and circuit diagram and usage method of function,NSVMUN2212T1G electronics tutorials.You can download from the Anli.