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NSVMUN5211DW1T3G Технические параметры

ON Semiconductor  NSVMUN5211DW1T3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 7 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 50V
Number of Elements 2 Elements
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Свойство продукта Значение свойства
Terminal Finish Tin (Sn)
Max Power Dissipation 250mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 250mW
Polarity/Channel Type NPN
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Resistor - Base (R1) 10k Ω
Resistor - Emitter Base (R2) 10k Ω
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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NSVMUN5211DW1T3G Документы

NSVMUN5211DW1T3G brand manufacturers: ON Semiconductor, Anli stock, NSVMUN5211DW1T3G reference price.ON Semiconductor. NSVMUN5211DW1T3G parameters, NSVMUN5211DW1T3G Datasheet PDF and pin diagram description download.You can use the NSVMUN5211DW1T3G Transistors - Bipolar (BJT) - Arrays, Pre-Biased, DSP Datesheet PDF, find NSVMUN5211DW1T3G pin diagram and circuit diagram and usage method of function,NSVMUN5211DW1T3G electronics tutorials.You can download from the Anli.