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NSVMUN5331DW1T1G Технические параметры

ON Semiconductor  NSVMUN5331DW1T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Collector-Emitter Breakdown Voltage 50V
Packaging Tape & Reel (TR)
Published 2014
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
Max Power Dissipation 250mW
Power - Max 250mW
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA
Resistor - Base (R1) 2.2k Ω
Resistor - Emitter Base (R2) 2.2k Ω
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства

NSVMUN5331DW1T1G Документы

NSVMUN5331DW1T1G brand manufacturers: ON Semiconductor, Anli stock, NSVMUN5331DW1T1G reference price.ON Semiconductor. NSVMUN5331DW1T1G parameters, NSVMUN5331DW1T1G Datasheet PDF and pin diagram description download.You can use the NSVMUN5331DW1T1G Transistors - Bipolar (BJT) - Arrays, Pre-Biased, DSP Datesheet PDF, find NSVMUN5331DW1T1G pin diagram and circuit diagram and usage method of function,NSVMUN5331DW1T1G electronics tutorials.You can download from the Anli.