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NSVT45010MW6T1G Технические параметры

ON Semiconductor  NSVT45010MW6T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 45V
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Свойство продукта Значение свойства
Terminal Finish Tin (Sn)
Max Power Dissipation 380mW
Terminal Form GULL WING
Reference Standard AEC-Q101
Configuration SEPARATE, 2 ELEMENTS
Power - Max 380mW
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 650mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Transition Frequency 100MHz
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 50V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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NSVT45010MW6T1G Документы

NSVT45010MW6T1G brand manufacturers: ON Semiconductor, Anli stock, NSVT45010MW6T1G reference price.ON Semiconductor. NSVT45010MW6T1G parameters, NSVT45010MW6T1G Datasheet PDF and pin diagram description download.You can use the NSVT45010MW6T1G Transistors - Bipolar (BJT) - Arrays, DSP Datesheet PDF, find NSVT45010MW6T1G pin diagram and circuit diagram and usage method of function,NSVT45010MW6T1G electronics tutorials.You can download from the Anli.