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NTA4151PT1 Технические параметры

ON Semiconductor  NTA4151PT1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 760mA Tj
Drive Voltage (Max Rds On, Min Rds On) 1.8V 4.5V
Number of Elements 1 Element
Power Dissipation (Max) 301mW Tj
Turn Off Delay Time 29 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Voltage - Rated DC -20V
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 235
Reach Compliance Code not_compliant
Свойство продукта Значение свойства
Current Rating -760mA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 301mW
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 360m Ω @ 350mA, 4.5V
Vgs(th) (Max) @ Id 450mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 156pF @ 5V
Gate Charge (Qg) (Max) @ Vgs 2.1nC @ 4.5V
Rise Time 8.2ns
Drain to Source Voltage (Vdss) 20V
Vgs (Max) ±6V
Fall Time (Typ) 8.2 ns
Continuous Drain Current (ID) 760mA
Gate to Source Voltage (Vgs) 6V
Drain Current-Max (Abs) (ID) 0.76A
Drain-source On Resistance-Max 0.36Ohm
Drain to Source Breakdown Voltage -20V
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

NTA4151PT1 Документы

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