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NTB5605PT4G Технические параметры

ON Semiconductor  NTB5605PT4G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Surface Mount YES
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Number of Pins 3Pins
Transistor Element Material SILICON
Turn Off Delay Time 29 ns
Power Dissipation (Max) 88W Tc
Number of Elements 1 Element
Drive Voltage (Max Rds On, Min Rds On) 5V
Current - Continuous Drain (Id) @ 25℃ 18.5A Ta
Published 2005
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC -60V
Terminal Form GULL WING
Current Rating -18.5A
Pin Count 3
Свойство продукта Значение свойства
JESD-30 Code R-PSSO-G2
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 88W
Case Connection DRAIN
Turn On Delay Time 12.5 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 140m Ω @ 8.5A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1190pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V
Rise Time 122ns
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±20V
Fall Time (Typ) 75 ns
Continuous Drain Current (ID) 18.5A
Threshold Voltage -1.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
Pulsed Drain Current-Max (IDM) 55A
Width 9.65mm
Length 10.29mm
Height 4.83mm
RoHS Status ROHS3 Compliant
Radiation Hardening No
REACH SVHC No SVHC
Lead Free Lead Free

NTB5605PT4G Документы

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