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ON Semiconductor NTB60N06LT4 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ON Semiconductor | |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 6 days ago) | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 60A Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 5V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 2.4W Ta 150W Tj | |
| Turn Off Delay Time | 100 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2005 | |
| JESD-609 Code | e0 | |
| Pbfree Code | no | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Voltage - Rated DC | 60V | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 240 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Reach Compliance Code | not_compliant | |
| Current Rating | 60A | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 150W | |
| Case Connection | DRAIN | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 16m Ω @ 30A, 5V | |
| Vgs(th) (Max) @ Id | 2V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 3075pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 65nC @ 5V | |
| Rise Time | 576ns | |
| Vgs (Max) | ±15V | |
| Fall Time (Typ) | 237 ns | |
| Continuous Drain Current (ID) | 60A | |
| Gate to Source Voltage (Vgs) | 15V | |
| Drain-source On Resistance-Max | 0.016Ohm | |
| Drain to Source Breakdown Voltage | 60V | |
| Pulsed Drain Current-Max (IDM) | 180A | |
| Avalanche Energy Rating (Eas) | 454 mJ | |
| RoHS Status | Non-RoHS Compliant | |
| Lead Free | Contains Lead |