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NTB60N06T4 Технические параметры
ON Semiconductor NTB60N06T4 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ON Semiconductor | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Voltage Rating (DC) | 60 V | |
| RoHS | Compliant | |
| Turn Off Delay Time | 94.5 ns | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Manufacturer Package Code | CASE 418B-04 | |
| Reflow Temperature-Max (s) | 30 | |
| Operating Temperature-Max | 175 °C | |
| Rohs Code | No | |
| Manufacturer Part Number | NTB60N06T4 | |
| Package Shape | RECTANGULAR | |
| Manufacturer | ON Semiconductor | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Risk Rank | 5.2 | |
| Drain Current-Max (ID) | 60 A | |
| Packaging | Bulk | |
| JESD-609 Code | e0 | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Max Operating Temperature | 175 °C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Min Operating Temperature | -55 °C | |
| Subcategory | FET General Purpose Power | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 240 | |
| Reach Compliance Code | not_compliant | |
| Current Rating | 60 A | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 150 W | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Rise Time | 180.7 ns | |
| Polarity/Channel Type | N-CHANNEL | |
| Continuous Drain Current (ID) | 60 A | |
| Gate to Source Voltage (Vgs) | 20 V | |
| Drain Current-Max (Abs) (ID) | 60 A | |
| Drain-source On Resistance-Max | 0.014 Ω | |
| Drain to Source Breakdown Voltage | 60 V | |
| Pulsed Drain Current-Max (IDM) | 180 A | |
| DS Breakdown Voltage-Min | 60 V | |
| Avalanche Energy Rating (Eas) | 454 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 150 W | |
| Drain to Source Resistance | 14 mΩ | |
| Lead Free | Contains Lead |
NTB60N06T4 Документы
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