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NTB60N06T4G Технические параметры

ON Semiconductor  NTB60N06T4G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 60A Ta
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 2.4W Ta 150W Tj
Turn Off Delay Time 94.5 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Resistance 16MOhm
Voltage - Rated DC 60V
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 60A
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSSO-G2
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 150W
Case Connection DRAIN
Turn On Delay Time 25.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3220pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 81nC @ 10V
Rise Time 180.7ns
Vgs (Max) ±20V
Fall Time (Typ) 142.5 ns
Continuous Drain Current (ID) 60A
Threshold Voltage 2.85V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 454 mJ
Height 4.83mm
Length 10.29mm
Width 9.65mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NTB60N06T4G Документы

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