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NTB75N03L09T4G Технические параметры

ON Semiconductor  NTB75N03L09T4G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status OBSOLETE (Last Updated: 19 hours ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 75A Tc
Drive Voltage (Max Rds On, Min Rds On) 5V
Number of Elements 1 Element
Power Dissipation (Max) 2.5W Ta 125W Tc
Turn Off Delay Time 65 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Resistance 8MOhm
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Voltage - Rated DC 30V
Свойство продукта Значение свойства
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 75A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 37.5A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5635pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 75nC @ 5V
Rise Time 130ns
Vgs (Max) ±20V
Fall Time (Typ) 105 ns
Continuous Drain Current (ID) 75A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 225A
RoHS Status RoHS Compliant
Lead Free Lead Free

NTB75N03L09T4G Документы

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